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1

A comprehensive study of stress induced leakage current using a floating gate structure for direct applications in EEPROM memories

D. Pic, D. Goguenheim, J.-L. Ogier

Journal:

Microelectronics Reliability

Year:

2007

Language:

english

File:

PDF, 569 KB

english, 2007

2

Analysis of high temperature effects on performances and hot-carrier degradation in DC/AC stressed 0.35 μm n-MOSFETs

A. Bravaix, D. Goguenheim, N. Revil, E. Vincent, M. Varrot, P. Mortini

Journal:

Microelectronics Reliability

Year:

1999

Language:

english

File:

PDF, 401 KB

english, 1999

3

Biofloc contribution to antioxidant defence status, lipid nutrition and reproductive performance of broodstock of the shrimp Litopenaeus stylirostris: Consequences for the quality of eggs and larvae

Cardona, Emilie, Lorgeoux, Bénédicte, Chim, Liet, Goguenheim, Jean, Le Delliou, Hervé, Cahu, Chantal

Journal:

Year:

2015

Language:

english

File:

PDF, 1.06 MB

english, 2015

4

Impacts of the recovery phenomena on the worst-case of damage in DC/AC stressed ultra-thin NO gate-oxide MOSFETs

A. Bravaix, D. Goguenheim, M. Denais, V. Huard, C. Parthasarathy, F. Perrier, N. Revil, E. Vincent

Journal:

Microelectronics Reliability

Year:

2005

Language:

english

File:

PDF, 529 KB

english, 2005

5

HOT-CARRIER RELIABILITY IN n-MOSFETs USED AS PASS-TRANSISTORS

D Goguenheim, A Bravaix, D Vuillaume, M Varrot, N Revil, P Mortini

Journal:

Microelectronics Reliability

Year:

1998

Language:

english

File:

PDF, 259 KB

english, 1998

6

Hot-carrier injections in SiO2

D Vuillaume, A Bravaix, D Goguenheim

Journal:

Microelectronics Reliability

Year:

1998

Language:

english

File:

PDF, 473 KB

english, 1998

7

Experimental study of the quasi-breakdown failure mechanism in 4.5 nm-thick SiO2 oxides

D. Goguenheim, A. Bravaix, D. Vuillaume, F. Mondon, Ph. Candelier, M. Jourdain, A. Meinertzhagen

Journal:

Microelectronics Reliability

Year:

1999

Language:

english

File:

PDF, 362 KB

english, 1999

8

Dynamic stress method for accurate NVM oxide robustness evaluation for automotive applications

Pic, D., Regnier, A., Pean, V., Ogier, J.-L., Goguenheim, D.

Journal:

Microelectronics Reliability

Year:

2008

Language:

english

File:

PDF, 432 KB

english, 2008

9

Hole injection enhanced hot-carrier degradation in PMOSFETs used for systems on chip applications with 6.5–2 nm thick gate-oxides

A. Bravaix, D. Goguenheim, N. Revil, E. Vincent

Journal:

Microelectronics Reliability

Year:

2004

Language:

english

File:

PDF, 467 KB

english, 2004

10

Determination of the electrical properties of thermally grown ultrathin nitride films

N Pic, A Glachant, S Nitsche, J.Y Hoarau, D Goguenheim, D Vuillaume, A Sibai, C Chanelière

Journal:

Microelectronics Reliability

Year:

2000

Language:

english

File:

PDF, 336 KB

english, 2000

11

Comparison of oxide leakage currents induced by ion implantation and high field electric stress

D Goguenheim, A Bravaix, J.M Moragues, P Lambert, P Boivin

Journal:

Microelectronics Reliability

Year:

2000

Language:

english

File:

PDF, 233 KB

english, 2000

12

Injection Mechanisms and Lifetime Prediction with the Substrate Voltage in 0.15μm Channel-Length N-MOSFETs

A. Bravaix, D. Goguenheim, N. Revil, E. Vincent

Journal:

Microelectronics Reliability

Year:

2001

File:

PDF, 401 KB

2001

13

Experimental extraction of degradation parameters after constant voltage stress and substrate hot electron injection on ultrathin oxides

C. Trapes, D. Goguenheim, A. Bravaix

Journal:

Microelectronics Reliability

Year:

2005

Language:

english

File:

PDF, 134 KB

english, 2005

14

[IEEE 2008 IEEE International Integrated Reliability Workshop Final Report (IRW) - South lake Tahoe, CA, USA (2008.10.12-2008.10.16)] 2008 IEEE International Integrated Reliability Workshop Final Report - Advanced On-The-Fly Method with Correction of Initial Values to Characterize Negative Bias Temperature Instability Reliability (NBTI)

Benard, Christelle, Ogier, Jean-Luc, Goguenheim, Didier

Year:

2008

Language:

english

File:

PDF, 255 KB

english, 2008

15

Carrier injection efficiency for the reliability study of 3.5–1.2 nm thick gate-oxide CMOS technologies

A. Bravaix, C. Trapes, D. Goguenheim, N. Revil, E. Vincent

Journal:

Microelectronics Reliability

Year:

2003

Language:

english

File:

PDF, 163 KB

english, 2003

16

Oxide reliability below 3 nm for advanced CMOS: Issues, characterization, and solutions

D. Goguenheim, D. Pic, J.L. Ogier

Journal:

Microelectronics Reliability

Year:

2007

Language:

english

File:

PDF, 473 KB

english, 2007

17

Impact of wafer charging on hot carrier reliability and optimization of latent damage detection methodology in advanced CMOS technologies

D. Goguenheim, A. Bravaix, S. Gomri, J.M. Moragues, C. Monserie, N. Legrand, P. Boivin

Journal:

Microelectronics Reliability

Year:

2005

Language:

english

File:

PDF, 481 KB

english, 2005

18

Assessment of temperature and voltage accelerating factors for 2.3–3.2 nm SiO2 thin oxides stressed to hard breakdown

D. Pic, D. Goguenheim, J.L. Ogier

Journal:

Microelectronics Reliability

Year:

2008

Language:

english

File:

PDF, 310 KB

english, 2008

19

Influence of various process steps on the reliability of PMOSFETs submitted to negative bias temperature instabilities

Christelle Bénard, Gaëtan Math, Pascal Fornara, Jean-Luc Ogier, Didier Goguenheim

Journal:

Microelectronics Reliability

Year:

2009

Language:

english

File:

PDF, 758 KB

english, 2009

20

[IEEE 2014 23rd Wireless and Optical Communication Conference (WOCC) - Newark, NJ, USA (2014.5.9-2014.5.10)] 2014 23rd Wireless and Optical Communication Conference (WOCC) - Distance measurement using narrowband ZigBee devices

Barrau, Florian, Paille, Bruno, Kussener, Edith, Goguenheim, Didier

Year:

2014

Language:

english

File:

PDF, 1.53 MB

english, 2014

21

Hot-carrier reliability study of second and first impact ionization degradation in 0.15-μm channel-length N-MOSFETS

A. Bravaix, D. Goguenheim, N. Revil, E. Vincent

Journal:

Microelectronic Engineering

Year:

2001

Language:

english

File:

PDF, 232 KB

english, 2001

22

[IEEE 2014 IEEE International Integrated Reliability Workshop (IIRW) - South Lake Tahoe, CA (2014.10.12-2014.10.16)] 2014 IEEE International Integrated Reliability Workshop Final Report (IIRW) - Degradation mechanism during gate stress at high electrical field on high voltage MOSFET for non-volatile memory applications

Carmona, M., Lopez, L., Ogier, J.-L, Goguenheim, D.

Year:

2014

Language:

english

File:

PDF, 553 KB

english, 2014

23

[IEEE 2010 IEEE International Reliability Physics Symposium - Garden Grove (Anaheim), CA, USA (2010.05.2-2010.05.6)] 2010 IEEE International Reliability Physics Symposium - Off state incorporation into the 3 energy mode device lifetime modeling for advanced 40nm CMOS node

Bravaix, A., Guerin, C., Goguenheim, D., Huard, V., Roy, D., Besset, C., Renard, S., Randriamihaja, Y. Mamy, Vincent, E.

Year:

2010

Language:

english

File:

PDF, 590 KB

english, 2010

24

Temperature and field dependence of stress induced leakage currents in very thin (

Didier Goguenheim, Alain Bravaix, Bouchra Ananou, Céline Trapes, Francois Mondon, Gilles Reimbold

Journal:

Journal of Non-Crystalline Solids

Year:

2001

Language:

english

File:

PDF, 503 KB

english, 2001

25

Impact of carrier injection in 2.2 nm-thick SiO2 oxides after first and substrate enhanced electron injection

Céline Trapes, Didier Goguenheim, Alain Bravaix

Journal:

Journal of Non-Crystalline Solids

Year:

2003

Language:

english

File:

PDF, 263 KB

english, 2003

26

[IEEE 2014 IEEE International Conference on Electron Devices and Solid-State Circuits (EDSSC) - Chengdu, China (2014.6.18-2014.6.20)] 2014 IEEE International Conference on Electron Devices and Solid-State Circuits - Gate stress study on High Voltage MOSFET for Non-Volatile Memory applications

Carmona, M., Lopez, L., Ogier, J.-L., Goguenheim, D.

Year:

2014

Language:

english

File:

PDF, 846 KB

english, 2014

27

Influence du régime alimentaire sur la reproduction en captivité de Penaeus vannamei et Penaeus stylirostris

Marie-Lise Galgani, AQUACOP, J. Goguenheim, F. Galgani, G. Cuzon

Journal:

Year:

1989

File:

PDF, 917 KB

1989

28

Octadecyltrichlorosilane monolayers as ultrathin gate insulating films in metal-insulator-semiconductor devices

Fontaine, P., Goguenheim, D., Deresmes, D., Vuillaume, D., Garet, M., Rondelez, F.

Journal:

Applied Physics Letters

Year:

1993

Language:

english

File:

PDF, 599 KB

english, 1993

29

Oxidation kinetics of Ni metallic films: Formation of NiO-based resistive switching structures

L. Courtade, Ch. Turquat, Ch. Muller, J.G. Lisoni, L. Goux, D.J. Wouters, D. Goguenheim, P. Roussel, L. Ortega

Journal:

Thin Solid Films

Year:

2008

Language:

english

File:

PDF, 1.21 MB

english, 2008

30

Comparison of oxide leakage currents induced by ion implantation and high field electric stress

D Goguenheim, A Bravaix, C Monserie, J.M Moragues, P Lambert, P Boivin

Journal:

Solid-State Electronics

Year:

2001

Language:

english

File:

PDF, 456 KB

english, 2001

31

[IEEE 1999 IEEE International Integrated Reliability Workshop Final Report - Lake Tahoe, CA, USA (18-21 Oct. 1999)] 1999 IEEE International Integrated Reliability Workshop Final Report (Cat. No. 99TH8460) - Hot-carrier damage in AC-stressed deep submicrometer CMOS technologies

Bravaix, A., Goguenheim, D., Revil, N., Vincent, E.

Year:

1999

Language:

english

File:

PDF, 439 KB

english, 1999

32

Nature of the defects generated by electric field stress at the Si-SiO2 interface

Vuillaume, Dominique, Goguenheim, Didier, Bourgoin, Jacques C.

Journal:

Applied Physics Letters

Year:

1991

Language:

english

File:

PDF, 694 KB

english, 1991

33

[IEEE 2008 IEEE International Integrated Reliability Workshop Final Report (IRW) - South lake Tahoe, CA, USA (2008.10.12-2008.10.16)] 2008 IEEE International Integrated Reliability Workshop Final Report - Geometry effects on the NBTI degradation of PMOS transistors

Math, Gaetan, Benard, Christelle, Ogier, Jean-Luc, Goguenheim, Didier

Year:

2008

Language:

english

File:

PDF, 1.12 MB

english, 2008

34

[IEEE 2006 7th Annual Non-Volatile Memory Technology Symposium - San Mateo, CA, USA (2006.11.5-2006.11.8)] 2006 7th Annual Non-Volatile Memory Technology Symposium - Microstructure and resistance switching in NiO binary oxide films obtained from Ni oxidation

Courtade, L., Turquat, Ch., Muller, Ch., Lisoni, J.G., Goux, L., Wouters, D.J., Goguenheim, D.

Year:

2006

Language:

english

File:

PDF, 2.90 MB

english, 2006

35

[IEEE 2004 24th International Conference on Microelectronics - Nis, Serbia (16-19 May 2004)] 2004 24th International Conference on Microelectronics (IEEE Cat. No.04TH8716) - Improved methodology based on hot carriers injections to detect wafer charging damage in advanced CMOS technologies

Goguenheim, D., Bravaix, A., Gomri, S., Moragues, J.M., Monserie, C., Legrand, N., Boivin, P.

Year:

2004

Language:

english

File:

PDF, 273 KB

english, 2004

36

Re-Examination of the Configuration Coordinate Diagram of EL2

Goguenheim, D., Stiévenard, D., Guillot, Gérard

Journal:

Materials Science Forum

Year:

1992

File:

PDF, 310 KB

1992

37

A coupled I(V) and charge-pumping analysis of Stress Induced Leakage Currents in 5nm-thick gate oxides

D. Goguenheim, A. Bravaix, D. Vuillaume, F. Mondon, Ph. Candelier, M. Jourdain, A. Meinertzhagen

Journal:

Microelectronic Engineering

Year:

1997

Language:

english

File:

PDF, 301 KB

english, 1997

38

Defects Induced by High Electric Field Stress and the Trivalent Silicon Defects at the Si-Si02 Interface

Vuillaume, D., Mir, A., Goguenheim, D.

Journal:

Materials Science Forum

Year:

1992

File:

PDF, 362 KB

1992

39

Portable microstimulator for chronic deep brain stimulation in freely moving rats

Claude Forni, Olivier Mainard, Christophe Melon, Didier Goguenheim, Lydia Kerkerian-Le Goff, Pascal Salin

Journal:

Journal of Neuroscience Methods

Year:

2012

Language:

english

File:

PDF, 1.40 MB

english, 2012

40

[IEEE IEEE International Integrated Reliability Workshop - Lake Tahoe, CA, USA (21-24 Oct. 2002)] IEEE International Integrated Reliability Workshop Final Report, 2002. - Comparison of low leakage and high speed deep submicron PMOSFETs submitted to hole injections

Bravaix, A., Goguenheim, D., Revil, N., Vincent, E.

Year:

2002

Language:

english

File:

PDF, 523 KB

english, 2002

41

Improved hot-carrier immunity of p-MOSFET's with 8nm thick nitrided gate-oxide during bi-directional stressing

A. Bravaix, D. Vuillaume, D. Goguenheim, D. Dorval, M. Haond

Journal:

Microelectronic Engineering

Year:

1995

Language:

english

File:

PDF, 328 KB

english, 1995

42

Determination of the electrical properties of ultrathin silicon-based dielectric films: thermally grown SiNx

N. Pic, A. Glachant, S. Nitsche, J.Y. Hoarau, D. Goguenheim, D. Vuillaume, A. Sibai, C. Chaneliere

Journal:

Solid-State Electronics

Year:

2001

Language:

english

File:

PDF, 237 KB

english, 2001

43

Deep hole trapping effects in the degradation mechanisms of 6.5–2 nm thick gate-oxide PMOSFETs

A Bravaix, D Goguenheim, N Revil, E Vincent

Journal:

Microelectronic Engineering

Year:

2004

Language:

english

File:

PDF, 255 KB

english, 2004

44

Stress induced leakage currents in N-MOSFETs submitted to channel hot carrier injections

D Goguenheim, A Bravaix, D Vuillaume, F Mondon, M Jourdain, A Meinertzhagen

Journal:

Journal of Non-Crystalline Solids

Year:

1999

Language:

english

File:

PDF, 483 KB

english, 1999

45

Dry and wet methods of silicon dioxide surface functionalisation with 3-aminopropyl trimethoxysilane: application to fullerene C60 anchoring

A.Gré, N.A., Delafosse, gory, Patrone, Lionel, Goguenheim, Didier

Journal:

International Journal of Nanotechnology

Year:

2012

Language:

english

File:

PDF, 2.85 MB

english, 2012

46

[IEEE 2008 IEEE International Integrated Reliability Workshop Final Report (IRW) - South lake Tahoe, CA, USA (2008.10.12-2008.10.16)] 2008 IEEE International Integrated Reliability Workshop Final Report - Total Recovery of Defects Generated by Negative Bias Temperature Instability (NBTI)

Benard, Christelle, Ogier, Jean-Luc, Goguenheim, Didier

Year:

2008

Language:

english

File:

PDF, 372 KB

english, 2008

47

[IEEE 2006 25th International Conference on Microelectronics - Belgrade, Serbia and Montenegro (14-17 May 2006)] 2006 25th International Conference on Microelectronics - Long Range Statistical Lifetime Prediction of UltraThin SiO2 Oxides: Influence of Accelerated Ageing Methods and Extrapolation Models

Pic, D., Goguenheim, D., Ogier, J.-L.

Year:

2006

Language:

english

File:

PDF, 717 KB

english, 2006

48

[IEEE 30th European Solid-State Device Research Conference - Cork, Ireland (2000.9.11-2000.9.13)] 30th European Solid-State Device Research Conference - Comparison of Second Impact Ionization Phenomena Between 0.18um N- and P-channel MOSFET's

Bravaix, A., Goguenheim, D., Revil, N., Vincent, E.

Year:

2000

Language:

english

File:

PDF, 184 KB

english, 2000

49

Efficiency of interface trap generation under hole injections in 2.1 nm thick gate-oxide P-MOSFETs

Alain Bravaix, Didier Goguenheim, Nathalie Revil, Laurent Rubaldo, Emmanuel Vincent

Journal:

Journal of Non-Crystalline Solids

Year:

2003

Language:

english

File:

PDF, 275 KB

english, 2003

50

interface

Goguenheim, Didier, Lannoo, Michel

Journal:

Physical Review B

Year:

1991

Language:

english

File:

PDF, 355 KB

english, 1991

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